Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-04-26
2008-11-11
Smith, Zandra V. (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
Reexamination Certificate
active
07449404
ABSTRACT:
A method for improving Mg doping of Group III-N materials grown by MOCVD preventing condensation in the gas phase or on reactor surfaces of adducts of magnesocene and ammonia by suitably heating reactor surfaces between the location of mixing of the magnesocene and ammonia reactants and the Group III-nitride surface whereon growth is to occur.
REFERENCES:
patent: 2002/0014629 (2002-02-01), Shibata et al.
Huili Xing et al, “Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition” The Japan society of Applied Physics, vol. 42 (2003) pp. 50-53.
Y. Ohba et al, “A study on strong memory effects for Mg doping in GaN metalorganic chemical vapor deposition”, Journal of Crystal Growth, 1994, vol. 145 pp. 214-218.
Matthew J. Schurman, et al, “Reproducibility of GaN and InGaN films grown in a multi-wafer rotating-disc reactor”, Materials Science and Engineering, B43, 1997 pp. 222-227.
B. Beaumont, et al, “Violet GaN based light emitting diodes fabricated by metal organics vapour phase epitaxy”, Materials Science and Engineering B50, 1997 pp. 296-301.
G. T. Wang et al, “Complex Formation between Magnesocene (MgCp2) and NH3: Implications for p-Type Doping of Group III Nitrides and the MgMemory Effect”, Journal of Physical Chemistry A, vol. 108, No. 22, 20048 pp. 4873-4877.
Creighton J. Randall
Wang George T.
Ashby Carol I
Rodgers Colleen E
Sandia Corporation
Smith Zandra V.
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