Method for improving mask layout and fabrication

Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design

Reexamination Certificate

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C716S030000

Reexamination Certificate

active

07434197

ABSTRACT:
A hot spot is identified within a mask layout design. The hot spot represents a local region of the mask layout design having one or more feature geometries susceptible to producing one or more fabrication deficiencies. A test structure is generated for the identified hot spot. The test structure is defined to emulate the one or more feature geometries susceptible to producing the one or more fabrication deficiencies. The test structure is fabricated on a test wafer using specified fabrication processes. The as-fabricated test structure is examined to identify one or more adjustments to either the feature geometries of the hot spot of the mask layout design or the specified fabrication processes, wherein the identified adjustments are capable of reducing the fabrication deficiencies.

REFERENCES:
patent: 6782525 (2004-08-01), Garza et al.
patent: 6954911 (2005-10-01), Pierrat
patent: 6968527 (2005-11-01), Pierrat
patent: 2004/0019870 (2004-01-01), Ohmori

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