Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2008-06-17
2008-06-17
Loke, Steven (Department: 2818)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S780000, C438S787000, C438S789000, C438S623000
Reexamination Certificate
active
07387973
ABSTRACT:
A method for treating an inter-metal dielectric (IMD) layer to improve a mechanical strength and/or repair plasma etching damage including providing a low-K silicon oxide containing dielectric insulating layer; and carrying out a super critical fluid treatment of the low-K dielectric insulating layer including supercritical CO2and a solvent including a silicon bond forming substituent having a bonding energy greater than a Si—H to replace at least a portion of the Si—H bonds with the silicon bond forming substituent.
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Lo Henry
Tseng Joshua
Wang Ching-Ya
Goodwin David
Loke Steven
Taiwan Semiconductor Manufacturing Co. Ltd.
Tung & Associates
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