Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of...
Reexamination Certificate
2011-06-07
2011-06-07
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
C438S703000, C438S761000, C438S778000, C438S780000, C257SE21240
Reexamination Certificate
active
07955990
ABSTRACT:
Provided herein are improved methods of depositing carbon-based films using acetylene as a precursor. The methods involve using a low-vapor pressure solvent, e.g., dimethylfluoride (DMF) to stabilize the acetylene and delivering the acetylene to a deposition chamber. The methods provide improved wafer-to-wafer thickness uniformity and increase the usable amount of acetylene in an acetylene source to over 95%.
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Henri Jon
Hsu Gishun
Sculac Robert
Stoddard Scott
Lee Kyoung
Novellus Systems Inc.
Richards N Drew
Weaver Austin Villeneuve & Sampson LLP
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