Method for improved power distribution in a three...

Details Method for improved power distribution in a three... Method for improved power distribution in a three...

2007-10-30

2010-06-01

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S667000, C257SE21597, C257SE21641

Reexamination Certificate

active

07727887

ABSTRACT:
A first through via is electrically insulated from surrounding wafer substrate material. A second through via is not electrically insulated from the surrounding wafer substrate material. This configuration is advantageous when the non-insulated via serves as the path for either Vdd or GND. By not insulating the through via, a first supply voltage (Vdd or GND) is allowed to flow through the surrounding wafer substrate material thereby decreasing the resistance of the first supply voltage path.

REFERENCES:
patent: 5006922 (1991-04-01), McShane et al.
patent: 5432677 (1995-07-01), Mowatt et al.
patent: 5438216 (1995-08-01), Juskey et al.
patent: 5691041 (1997-11-01), Frankeny et al.
patent: 5998292 (1999-12-01), Black et al.
patent: 6376908 (2002-04-01), Gaku et al.
patent: 6448174 (2002-09-01), Ramm
patent: 6492244 (2002-12-01), Christensen et al.
patent: 6495454 (2002-12-01), Livengood et al.
patent: 6690086 (2004-02-01), James et al.
patent: 6737755 (2004-05-01), McLellan et al.
patent: 6841884 (2005-01-01), Shizuno
patent: 6936536 (2005-08-01), Sinha
patent: 6977441 (2005-12-01), Hashimoto
patent: 7087988 (2006-08-01), Hosomi
patent: 7148565 (2006-12-01), Kim et al.
patent: 2003/0209809 (2003-11-01), Lasky et al.
patent: 2004/0173894 (2004-09-01), Glenn et al.
patent: 2004/0238850 (2004-12-01), Kusumoto
patent: 2005/0153060 (2005-07-01), McCormack et al.
patent: 2005/0266608 (2005-12-01), Ho et al.
patent: 2007/0194426 (2007-08-01), Hsu
patent: 2007/0249095 (2007-10-01), Song et al.
patent: 2008/0128773 (2008-06-01), Moll et al.
patent: 2008/0174976 (2008-07-01), Satoh et al.
patent: 2009/0008793 (2009-01-01), Pohl et al.

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