Method for improved manufacturability and patterning of...

Details Method for improved manufacturability and patterning of... Method for improved manufacturability and patterning of...

2006-12-29

2009-10-20

Rosasco, Stephen (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S311000

Reexamination Certificate

active

07604909

ABSTRACT:
A method of applying optical proximity correction features to a mask having a target pattern comprising a plurality of features to be imaged. The method includes the steps of defining a set of process parameters to be utilized to image the mask; determining an interference map based on the process parameters and the target pattern; defining an area of influence which represents the area about a given feature in the target pattern in which scattering bars will be utilized in the mask; and disposing a scattering bar in the mask adjacent the given feature in a location indicated by said interference map only within the area of influence of the given feature.

REFERENCES:
patent: 7093228 (2006-08-01), Andreev et al.
patent: 1513012 (2005-03-01), None

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