Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-09-25
2009-02-03
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S682000, C257SE21438, C257SE21627, C257SE21641
Reexamination Certificate
active
07485572
ABSTRACT:
A method of forming silicide contacts for semiconductor devices includes subjecting a silicon containing semiconductor wafer to a degas treatment at a temperature of about 400° C., transferring the semiconductor wafer from a degas chamber to a deposition chamber, depositing a cobalt layer over the wafer at a point in time when the semiconductor wafer has cooled to temperature range of about 275-300° C., depositing a cap layer over the cobalt layer, and annealing the semiconductor wafer so as to create silicide contacts at portions on the wafer where cobalt is formed over silicon.
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Byun, Jeong Soo, et al., “Effect of Deposition Temperature and Sputtering Ambient on In Situ Cobalt Silicide Formation”, J.Electrochem.Soc., vol. 144, No. 9, Sep. 1997, pp. 3175-3179.
Hon Wong Keith Kwong
Madan Anita
Purtell Robert J.
Cai Yuanmin
Cantor & Colburn LLP
Fourson George
International Business Machines - Corporation
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