Method for implanting the sidewalls of isolation trenches

Details Method for implanting the sidewalls of isolation trenches Method for implanting the sidewalls of isolation trenches

1984-11-29

1987-02-03

Terapane, John F.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156651, 156653, 156657, 1566591, 156662, 29576W, 29580, 148187, 427 93, 427 94, 427 95, 357 49, B44C 122, C03C 1500, H01L 2100, H01L 21461

Patent

active

H00002046

ABSTRACT:
A method of implanting ions into the sidewalls of isolation trenches is disclosed. The method utilizes a series of ion implants to produce concentrations of the ion, in most cases boron, along the depth of the trench. Since the ion concentration exhibits a Gaussian distribution function which tails off rapidly, the width of the trench is narrowed after the implantation to guarantee a sufficient boron concentration at the sidewalls of the trench. A layer of an insulating material is used to narrow the trench, where a conformal coating of the material will cover the sidewalls of the window and narrow the opening through the window. By increasing the boron doping in the sidewalls, the effects of boron segregation between the substrate and the isolation trench will be counteracted, thus eliminating the problem of creating an n-type inversion layer between the trench and the substrate.

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"The Diffusion of Boron . . .", Solid State Electronics, vol. 15, 1972, P. R. Wilson, pp. 961-970.
"Dopant Segregation in Polycrystalline . . .", Journal of Applied Physics, vol. 51, No. 11, Nov. 1980, T. I. Kamins, pp. 5755-5763.
"A Study of the Trench . . .", IEEE Electron Device Letters, vol. EDL-4, No. 9, Sep. 83, K. M. Cham et al. pp. 303-305.

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