Method for implanting ions in a semiconductor

Details Method for implanting ions in a semiconductor Method for implanting ions in a semiconductor

2006-12-12

2006-12-12

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S530000, C438S914000

Reexamination Certificate

active

07148131

ABSTRACT:
A method for implanting ions in a semiconductor is disclosed. The method includes implanting indium ions into a substrate of a semiconductor material of the semiconductor device for a first time period. The method also includes implanting boron ions into the substrate for a second time period, wherein the first time period is initiated prior to the second time period.

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High Performance 35 nm Gate Length CMOS with NO Oxynitride Gate Dielectric and Ni Salicide, s. Inaba, et al., 2001 IEEE.

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