Method for implanting atomic species through an uneven...

Details Method for implanting atomic species through an uneven... Method for implanting atomic species through an uneven...

2006-03-28

2006-03-28

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Fluid growth from gaseous state combined with preceding...

C438S311000, C438S488000

Reexamination Certificate

active

07018913

ABSTRACT:
A method for implanting atomic species through an uneven surface of a semiconductor layer. The technique includes applying a covering layer upon the uneven surface in an amount sufficient and in a manner to increase surface uniformity. The method also includes implanting atomic species through the covering layer and uneven surface to obtain a more uniform depth of implantation of the atomic species in the layer.

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patent: 6274439 (2001-08-01), Ito
patent: 6326279 (2001-12-01), Kakizaki et al.
patent: 6867067 (2005-03-01), Ghyselen et al.
patent: 04-168764 (1992-06-01), None

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