Method for implanting a cell channel ion of semiconductor...

Details Method for implanting a cell channel ion of semiconductor... Method for implanting a cell channel ion of semiconductor...

2008-07-01

2008-07-01

Toledo, Fernando L. (Department: 2823)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C257SE21618, C438S289000, C438S291000, C438S514000

Reexamination Certificate

active

07393767

ABSTRACT:
A method for implanting a cell channel ion of semiconductor device is disclosed. In accordance with the method, the bit line contact region and the edge portion of the channel region adjacent to the bit line contact region in the cell region are subjected to a selective cell channel implant process two times using a ion implant mask and rest of the cell region is subjected to cell channel implant process only once so that a impurity concentration of the storage node contact region is maintained at a lower level for minimal leakage current in the storage node contact region.

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