Method for hydrogenating a polycrystal silicon layer of a thin f

Details Method for hydrogenating a polycrystal silicon layer of a thin f Method for hydrogenating a polycrystal silicon layer of a thin f

1995-06-07

1997-05-06

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438798, 438766, H01L 21265, H01L 2120, H01L 2102

Patent

active

056270852

ABSTRACT:
The present invention improves a current--voltage characteristic by perfectly eliminating defects in the polycrystal silicon layer of TFT by hydrogenation. In the first process, hydrogen is doped into the polycrystal silicon layer 16 of TFT 1 by the hydrogen plasma doping method to eliminate a greater part of the defects in the polycrystal silicon layer 16. Thereafter, in the second process, after an amorphous silicon nitride film 23 including hydrogen is formed on the polycrystal silicon layer 16 or on the stopper layer 17 provided on the polycrystal silicon layer 16, hydrogen is released from the amorphous silicon nitride film 23 including hydrogen by the annealing process and such released hydrogen is then diffused into the polycrystal silicon layer 16 in order to eliminate remaining defects in the polycrystal silicon layer 16.

REFERENCES:
patent: 5053347 (1991-10-01), Wu
patent: 5150181 (1992-09-01), Takeda et al.
patent: 5455182 (1995-10-01), Nishimoto et al.

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