Method for hot wall reactive ion etching using a dielectric or m

Details Method for hot wall reactive ion etching using a dielectric or m Method for hot wall reactive ion etching using a dielectric or m

1995-06-07

1997-06-10

Breneman, R. Bruce

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

438905, 438706, H01L 2130

Patent

active

056372370

ABSTRACT:
The present invention relates to a method and apparatus for etching semiconductor devices where the undesirable deposition of films on the internal surfaces of the apparatus are prevented during the etching process. The system for etching devices provides an etching chamber having a deposition resistant surface, a holder for holding the device to be etched, and a heater for heating the deposition resistant surface to a temperature between 100 C to 600 C to impede the formation of films on the walls of the chamber. The etching system may further include the deposition resistant surface surrounding the holder while not interfering with the plasma used to etch the substrate.

REFERENCES:
patent: 4419201 (1983-12-01), Levinstein et al.
patent: 4693777 (1987-09-01), Hazano et al.
patent: 4859304 (1989-08-01), Cathey et al.
patent: 4971653 (1990-11-01), Powell et al.
patent: 5039376 (1991-08-01), Zukotynski et al.
R.G. Frieser, W.H. Ma, G.M. Ozols and B.N Zingerman, "IBM Technical Disclosure Bulletin", Polymerization Detection In Reactive Ion Etching, (Feb. 1982).
H.J. Geipel, "IBM Technical Disclosure Bulletin", End-Point Detection For Reactive Ion Etching, (Jul. 1977).
"Plasma Cleaning By Use of Hollow Cathode Discharge In a Trifluoromethane-Silicon Dioxide Dry Etching System"; Jap. J. Appl. Phys., Part 1 (1992), 31 (5A), pp. 1491-1498; Watanabe.

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