Method for homogeneously magnetizing an exchange-coupled...

Details Method for homogeneously magnetizing an exchange-coupled... Method for homogeneously magnetizing an exchange-coupled...

2006-07-11

2006-07-11

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S157000, C365S171000

Reexamination Certificate

active

07075814

ABSTRACT:
A method and apparatus for homogeneously magnetizing an exchange-coupled layer system of a digital magnetic memory cell device comprising an AAF layer system and an antiferromagnetic layer that exchange-couples a layer of the AAF layer system, characterized in that, given a defined direction of magnetization of the antiferromagnetic layer, the magnetic layers of the AAF layer system are saturated in a magnetic field and, afterward, the position of the direction of the antiferromagnetic layer magnetization and the direction of the saturating magnetic field relative to one another is changed, so that they are at an angle α of 0°<α<180° relative to one another, after which the saturating magnetic field is switched off.

REFERENCES:
patent: 6744086 (2004-06-01), Daughton et al.
patent: 6795334 (2004-09-01), Iwata et al.
Tong H C et al: “The Spin Flop of Synthetic Antiferromagnetic Films”Journal of Applied Physics, American Institute of Physics,. New York, U.S., vol. 87, No. 9, May 1, 2000, pp. 5055-5077, XP000947735 ISSN: 0021-8979 (the whole document).
Copy of International Search Report dated Jul. 3, 2003.

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