Method for high speed sensing for extra low voltage DRAM

Details Method for high speed sensing for extra low voltage DRAM Method for high speed sensing for extra low voltage DRAM

2007-03-12

2010-02-16

Nguyen, Dang T (Department: 2824)

Static information storage and retrieval

Read/write circuit

Flip-flop used for sensing

C365S207000, C365S226000

Reexamination Certificate

active

07663953

ABSTRACT:
A method and apparatus are provided for sensing in low voltage DRAM memory cells. A method according to one embodiment includes: providing a DRAM circuit having a memory cell, a sense amplifier including a pre-charge circuit connected to a first voltage source and a back-to-back inverter including a first and second NMOS transistor, each having a source and a first and second PMOS transistor, each having a source. The method further includes the steps of maintaining the voltage of the sources of the first and second NMOS transistors at a first voltage during normal operation and lowering the voltage of the sources of the first and second NMOS transistors from the first voltage to a second voltage during a read operation.

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