Method for heating exhaust gas in a substrate reactor

Coating processes – Coating by vapor – gas – or smoke – Mixture of vapors or gases utilized

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Details

4272481, 118719, 118728, C23C 1600

Patent

active

061532606

ABSTRACT:
The present invention is a single wafer reactor having a vented lower liner for heating exhaust gas. The apparatus of the present invention includes a reaction chamber. A wafer support member which divides the chamber into an upper and lower portion is positioned within the chamber. A gas outlet for exhausting gas from the chamber has a vent to exhaust gas from the lower portion of the chamber and an exhaust passage opening to exhaust gas from the upper portion of the chamber. Heated inert purge gas is fed from the lower chamber portion through the vent at a rate so as to prevent the deposition gas from condensing in the exhaust passage.

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