Method for heat processing of silicon

Details Method for heat processing of silicon Method for heat processing of silicon

1990-03-21

1992-05-05

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

437 10, 437 12, 148DIG60, 148DIG71, 148DIG125, H01L 21306

Patent

active

051104040

ABSTRACT:
In a method for heat process of silicon, a single crystal silicon produced by the Czochralski process is thermally processed at a low temperature ranging from 400.degree. C. to 550.degree. C. Outside this temperature range, the oxygen precipitate is not adequate. The result is that a predetermined oxygen precipitate can be obtained uniformly in the crystal growth direction without any reduction especially at the crystal bottom part. The resulting silicon is particularly suitable for manufacture of LSI.

REFERENCES:
patent: 4140524 (1979-02-01), Voltmer et al.
patent: 4314595 (1982-02-01), Yamamoto et al.
patent: 4548654 (1985-10-01), Tobin
patent: 4851358 (1989-07-01), Huber
IBM Technical Disclosure Bulletin, vol. 26, No. 3A, Aug. 1983, p. 1053, N.Y., U.S., K. D. Beyer et al. "Reduction of Oxygen Precipitation".
Patent Abstracts of Japan, vol. 11, No. 30 (C-400)[2477], Jan. 29, 1987 of JP-A-61 201 692 (Mitsubishi Metal Corp.) 06-09-1986.

Affiliated with

Also associated with

Rating

Method for heat processing of silicon does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for heat processing of silicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for heat processing of silicon will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1410022