Method for handling a thin silicon wafer

Details Method for handling a thin silicon wafer Method for handling a thin silicon wafer

2005-04-26

2005-04-26

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S654000, C438S704000

Reexamination Certificate

active

06884726

ABSTRACT:
A method for handling a thin silicon wafer including the steps of successively forming on a surface of the wafer a first protection layer, a first etch stop layer, and an external layer; forming on a surface of a support wafer a gluing layer of the same material as the external layer of the wafer, the surface of the support wafer including a plurality of pads, the respective upper portions of which are substantially planar and coplanar; fastening, by direct gluing, the external layer of the wafer and the gluing layer of the support wafer; processing the wafer to form circuits therein; depositing a second protection layer on the wafer surface which is not glued to the support wafer; and removing by an etch process the material forming the external layer of the wafer and the gluing layer of the support wafer.

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