Method for halide etching in the presence of water of semi-condu

Details Method for halide etching in the presence of water of semi-condu Method for halide etching in the presence of water of semi-condu

1991-09-23

1992-12-01

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156635, 252 793, 134 3, 134 31, C03C 1500

Patent

active

051677610

ABSTRACT:
A process for halide etching of a semi-conductor substrate in the presence of water. Etching is realized in a reaction vessel. The process steps comprise filling of the reaction vessel with a first gas to a first pressure and subsequently filling the reaction vessel with a second gas to a second pressure after which the substrate is left in the reaction vessel for several minutes to obtain the etching required. One of the gases is HF and the other of the gases is water vapor. The etching is conducted at sub-atmospheric pressure, preferably below 50 Torr.

REFERENCES:
patent: 4229247 (1980-10-01), Chiu et al.
patent: 4605479 (1986-08-01), Faith, Jr.
patent: 4749440 (1988-06-01), Blackwood et al.
patent: 5078832 (1992-01-01), Tanaka

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