Method for halide etching in the presence of water of semi-condu

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156635, 252 793, 134 3, 134 31, C03C 1500

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051677610

ABSTRACT:
A process for halide etching of a semi-conductor substrate in the presence of water. Etching is realized in a reaction vessel. The process steps comprise filling of the reaction vessel with a first gas to a first pressure and subsequently filling the reaction vessel with a second gas to a second pressure after which the substrate is left in the reaction vessel for several minutes to obtain the etching required. One of the gases is HF and the other of the gases is water vapor. The etching is conducted at sub-atmospheric pressure, preferably below 50 Torr.

REFERENCES:
patent: 4229247 (1980-10-01), Chiu et al.
patent: 4605479 (1986-08-01), Faith, Jr.
patent: 4749440 (1988-06-01), Blackwood et al.
patent: 5078832 (1992-01-01), Tanaka

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