Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Patent
1997-11-06
1999-11-02
Bowers, Charles
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
438 46, 117102, 117103, 117108, H01L 2120
Patent
active
059769580
ABSTRACT:
A method of growing a p-type doped Group II-VI semiconductor film includes the steps of forming a lattice comprising a Group II material and a Group VI material and generating a first Group V flux by evaporating a solid Group V source material. The first Group V flux is then decomposed to generate a second Group V flux, which is, in turn, provided to the lattice to p-type dope the growing film. The Group V source material may by arsenic such that the second Group V flux may predominantly include dimeric arsenic decomposed from tetrameric arsenic to improve the incorporation of arsenic into the Group VI sublattice of the lattice.
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Brewer Peter D.
deLyon Terence J.
Rajavel Rajesh D.
Wu Owen K.
Bowers Charles
Christianson Keith
Duraiswamy V. D.
Hughes Electronics Corporation
Sales M. W.
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