Method for growth of group III-V semiconductor material on a...

Details Method for growth of group III-V semiconductor material on a... Method for growth of group III-V semiconductor material on a...

2006-08-01

2006-08-01

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Having heterojunction

C438S343000

Reexamination Certificate

active

07084040

ABSTRACT:
Formation of a regrowth layer of a Group III–V semiconductor material is facilitated by prior formation of an intermediate layer, selected primarily for its smooth morphology properties. The intermediate layer is formed over an underlying substrate and over a dielectric layer formed over portions of the substrate. The intermediate layer maintains the monocrystalline properties of the underlying substrate in regions other than those covered by the dielectric layer, and improves the electrical and morphology properties of the regrowth layer formed over the intermediate layer.

REFERENCES:
patent: 4225409 (1980-09-01), Minomura
patent: 4296424 (1981-10-01), Shibasaki et al.
patent: 5273930 (1993-12-01), Steele et al.
patent: 5726462 (1998-03-01), Spahn et al.
patent: 2001/0004488 (2001-06-01), Morita
patent: 2003/0156610 (2003-08-01), Kwon
patent: 1 220 333 (2002-07-01), None

Affiliated with

Also associated with

Rating

Method for growth of group III-V semiconductor material on a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for growth of group III-V semiconductor material on a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for growth of group III-V semiconductor material on a... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3695143