Method for growing single crystals of thermally unstable ferroel

Details Method for growing single crystals of thermally unstable ferroel Method for growing single crystals of thermally unstable ferroel

1986-03-19

1987-08-18

Dixon, Jr., William R.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156624, 156DIG63, 156DIG81, 156DIG71, C30B 1102, C30B 1114

Patent

active

046875387

ABSTRACT:
A method is disclosed for growing thermally unstable ferroelectric materials having the formula MH.sub.2 XO.sub.4, where M is potassium, rubidium, cesium or ammonium; H is hydrogen or deuterium and X is phosphorus or arsenic. The ferroelectric material is heated to melt temperature in a constant volume cylindrical chamber (10) which is moisture-free. Improved crystal formation is accomplished by axially cooling the melt from the bottom end (18) of the chamber by thermal conduction along the chamber longitudinal axis predominantly and only minimally by radial thermal conduction through the sides (16) of the chamber. The axial cooling produces a crystal interface which is flat and perpendicular to the chamber axis and which gradually progresses toward the chamber top to provide uniform growth of a single crystal of ferroelectric material.

REFERENCES:
patent: 3607137 (1971-09-01), Inoguchi et al.
patent: 3653432 (1972-04-01), Schmid et al.
patent: 3949323 (1976-04-01), Bierlein
patent: 4521272 (1985-06-01), Gault
Belouet, C., "Growth and Characterization of Single Crystals of KDP Family", vol. 3, 1981, pp. 121-156.
Gatos, H., "On the Selection of Methods for Crystal Growth", from Crystal Growth, A Tutorial Approach, vol. 2, pp. 1-16, 1979, Bardsley et al. Ed.

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