Method for growing single crystals of dissociative compounds

Details Method for growing single crystals of dissociative compounds Method for growing single crystals of dissociative compounds

1985-05-17

1987-05-12

Lacey, David L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156617SP, 156DIG83, 156DIG89, 156DIG93, 422249, C30B 2702

Patent

active

046647422

ABSTRACT:
The present invention provides a method for growing single crystals of a dissociative compound by pulling with a volatile component gas of the dissociative compound sealed at a controlled pressure in a heated growth chamber in which the single crystals are pulled, wherein a partition pipe having a lower density than the density of melt of the dissociative compound is disposed so as to immerse its lower end in the melt and the melt is covered with B.sub.2 O.sub.3 at either one of the inside or outside of the partition pipe. The method of the present invention enables the precise, appropriate control of the melt composition during the course of growing and thereby provides single crystals free from any detrimental contamination and undesirable dislocation problems. The thus obtained crystals are especially desirable for use as substrates for high speed and/or optical devices, because of their excellent semi-insulating properties.

REFERENCES:
patent: 3088853 (1963-05-01), Harper
patent: 3198606 (1965-08-01), Lyons
patent: 3716345 (1973-02-01), Grabmaier
patent: 3741817 (1973-06-01), Bienert et al.
patent: 4036595 (1977-07-01), Lorenzini et al.
patent: 4203951 (1980-05-01), Goriletsky et al.
patent: 4431476 (1984-02-01), Watanabe et al.
patent: 4496424 (1985-01-01), Terashima et al.

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