Method for growing single crystal thin films of element semicond

Details Method for growing single crystal thin films of element semicond Method for growing single crystal thin films of element semicond

1987-09-04

1989-05-30

Stoll, Robert L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156610, 156613, 156614, 156DIG64, 156DIG102, 156DIG103, C30B 2510, C30B 2514

Patent

active

048348317

ABSTRACT:
A method for growing a single crystal thin film of an element semiconductor which comprises repeating the successive operations of feeding a single kind of gas containing the element semiconductor as a component element onto a substrate heated in a growth chamber and then exhausting the gas in the growth chamber under controlled conditions and thereby growing the single crystal thin film of said element semiconductor in a desired thickness with a precision of monomolecular layer. In an alternate method for growing a single crystal thin film of an element semiconductor, the sole gas containing the element semiconductor is continuously fed onto the substrate for a given period of time, thereby forming a single crystal thin film of element semiconductor having a desired thickness. According to the present invention, there can be obtained single crystal thin films with high quality in a high reproducibility, by simplified operating parameters and growing apparatus.

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Booker et al., Initial Nucleation and Growth of Epitaxial Silicon Layers, Conference of Growth of Crystals, Moscow, U.S.S.R., 7/20-21/66, pp. 108-115.
Matthews, Epitaxial Growth Part A, Academic Press, New York, 1975, pp. 100 to 101.
Runyan, Silicon Semiconductor Technology, McGraw-Hill Books, New York, 1965, pp. 12 and 13.

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