Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1990-03-09
1992-01-07
Chaudhuri, Olik
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156607, 1566191, 1566202, 156DIG70, C30B 1510
Patent
active
050788302
ABSTRACT:
In a single-crystal growth method disclosed herein, a melt is first prepared in a container having a cylindrical wall. The container is such that at least the inner peripheral surface of the cylindrical wall is formed of a material which is not wettable to the melt. A seed is then immersed in the melt and a single crystal rod formed on the seed is pulled in such a manner as to be coaxial with the cylindrical wall. The distance between the single crystal rod and the inner peripheral surface is set to a prescribed value G, so that the melt adjacent to the inner peripheral surface is formed into a prescribed meniscus shape. The temperature distribution at the melt surface is controlled to maintain the meniscus shape between the single crystal rod and the inner peripheral surface at an equilibrium state to thereby control the diameter of the single crystal rod.
REFERENCES:
patent: 3499736 (1970-03-01), Zwaneburg
patent: 4246064 (1981-01-01), Dewees et al.
patent: 4264385 (1981-04-01), Fisher
patent: 4431476 (1984-02-01), Watanabe et al.
patent: 4597949 (1986-07-01), Jasinski et al.
patent: 4668481 (1987-05-01), Watanabe et al.
L. P. Egorov, et al., Izvestiya Akademii Nauk SSSR, vol. 40, No. 7, pp. 1542-1545, 1976.
CRC Handbook of Chemistry and Physics, "Surface Tension of Liquid Elements", Gernot Lang, F-25-F-42.
Patent Abstracts of Japan, vol. 10, No. 362 (C-389) [2419], 12/4/86; & JP-A-61 158 892, 7/18/86.
Ohmura Taizo
Sassa Koichi
Shirata Keiji
Tomizawa Kenji
Uchida Nobuyuki
Chaudhuri Olik
Garrett Felisa
Mitsubishi Metal Corporation
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