Method for growing silicon single crystal

Details Method for growing silicon single crystal Method for growing silicon single crystal

1989-05-26

1991-08-06

Straub, Gary P.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG64, 156DIG115, 422249, 423348, 423349, 423350, C30B 2906, C30B 1520, C01B 3302

Patent

active

050375032

ABSTRACT:
A method for growing silicon single crystal uses as materials, silicon granules prepared by the silane process and having a residual hydrogen concentration of 7.5 wtppm or less, silicon granules prepared by the trichlorosilane process and having a residual chlorine concentration of 15 wtppm or less. In the case where such silicon granules are used, a bursting phenomenon does not occur when the silicon granules are melted. As a result, there is no scattered matter due to the bursting phenomenon, whereby the growth condition of the single crystal is not disturbed.

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