Method for growing semiconductor crystal

Details Method for growing semiconductor crystal Method for growing semiconductor crystal

1977-10-05

1980-03-18

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

148189, B01J 1736, B01J 1740

Patent

active

041938356

ABSTRACT:
When a highly resistive GaAs film doped with a metal impurity such as Fe, Ni or Cr is epitaxially grown from the vapor phase, a metallocene of this metal impurity such as Fe(C.sub.5 H.sub.5).sub.2, Cr(C.sub.5 H.sub.5).sub.2 or Ni(C.sub.5 H.sub.5).sub.2 or a derivative of this metallocene is employed as a starting material of this impurity. Even at room temperature or a temperature lower than room temperature a metallocene or a derivative thereof has such a high vapor pressure as to permit the epitaxial growth of a semi-insulating film so that heating of a line for feeding an impurity into a reaction tube may be eliminated and consequently an epitaxial system may be much simplified. Furthermore introduction of the impurity into the reaction tube may be instantaneously started or stopped by opening or closing a stop valve inserted into the feed line so that the impurity distribution may be sharply changed from one semi-insulating epitaxially grown film to another.

REFERENCES:
patent: 2778802 (1957-01-01), Willardson et al.
patent: 2904512 (1959-09-01), Horn
patent: 3421952 (1969-01-01), Conrad et al.
patent: 3630906 (1971-12-01), Willardson et al.
Condensed Chemical Dictionary, 8th Ed., Hawley van Nostrand, Reinhold, 10, N.Y. 1971.

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