Method for growing monocrystalline silicon through mask layer

Details Method for growing monocrystalline silicon through mask layer Method for growing monocrystalline silicon through mask layer

1984-05-10

1986-03-25

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG111, 156644, 148DIG26, C30B 2504

Patent

active

045781427

ABSTRACT:
A monocrystalline silicon layer is formed on a mask layer on a semiconductor substrate. An apertured mask layer is disposed on the substrate, and an epitaxial layer is then grown by a two-step deposition/etching cycle. By repeating the deposition/etching cycle a predetermined number of times, monocrystalline silicon will be grown from the substrate surface, through the mask aperture, and over the mask layer.

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