Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1983-11-18
1985-10-29
Bernstein, Hiram H.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156DIG111, 156653, C30B 2504
Patent
active
045499268
ABSTRACT:
A monocrystalline silicon layer is formed on a mask layer on a semiconductor substrate. An apertured mask layer is disposed on the substrate, and an epitaxial layer is then grown by a two-step deposition/etching cycle. By repeating the deposition/etching cycle a predetermined number of times, monocrystalline silicon will be grown from the substrate surface, through the mask aperture, and over the mask layer.
REFERENCES:
patent: 3239372 (1966-03-01), Sirtl
patent: 3425879 (1969-02-01), Shaw et al.
patent: 3746908 (1973-07-01), Engeler
patent: 3945864 (1976-03-01), Goldsmith et al.
patent: 3985590 (1976-10-01), Mason
patent: 4141765 (1979-02-01), Druminski et al.
DeLong, Advances in Dichlorosilane Epitaxial Technology, 10/1972, Solid State Technology, pp. 29-34, 41.
Runyan, The Status of Silicon Epitaxy, Semiconductor Silicon, Haberrecht & Klein, Eds., New York: Electrochem. Soc. 5/69, 169-188.
Joyce et al., Selective Epitaxial Deposition of Silicon, 8/1962, Nature, vol. 195, pp. 485.
Engeler et al., The "Epicon" Array: A New Semiconductor Array-Type Camera Tube Structure, 3/1970, Appl. Phys. Letters, 16(5) pp. 202-205.
Blumenfeld et al., The Epicon Camera Tube: An Epitaxial Diode Array Vidicon, 11/1971, IEEE Trans. ED18, 11, pp. 1036-1042.
International Publication WO 81/02948, Methods of Producing Sheets of Crystalline Material and Devices Made Therefrom, 10/1981.
Oldham et al., The Growth and Etching of Si Through Windows in SiO.sub.2, 4/1967, J. Electrochem. Soc., 114 (4), pp. 381-388.
Sirtl et al., Selective Epitaxy of Silicon Under Quasi-Equilibrium Conditions, Semiconductor Silicon, Electrochem. Soc., 5/1969, 169-188.
McClelland et al., A Technique for Producing Epitaxial Films on Reuseable Substrates, 9/1980, Appl. Phys. Lett 37(6).
Blackstone Scott C.
Corboy, Jr. John F.
Jastrzebski Lubomir L.
Pagliaro, Jr. Robert H.
Bernstein Hiram H.
Cohen Donald S.
Glick Kenneth R.
Morris Birgit E.
RCA Corporation
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