Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1998-12-15
2000-05-30
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
H01L 2906
Patent
active
060693681
ABSTRACT:
A method of forming a crystalline silicon well over a perovskite barrier layer, preferably for use in formation of a resonant tunneling diode. A silicon substrate (1) is provided of predetermined crystallographic orientation. A layer of crystallographic perovskite material (5) is formed over the silicon substrate and substantially matched to the lattice constant of the silicon substrate. A layer of crystallographic silicon (7) is formed over the perovskite layer substantially matched to the lattice constant of the perovskite layer. The perovskite layer is formed by the steps of placing the silicon substrate in a chamber and then evaporating a layer of barium strontium oxide (3) thereon with a thickness of from about three to about six Angstroms and then evaporating a layer of calcium strontium titanate (5) thereon having a thickness of from about six to about 25 Angstroms thereon in the case of a tunneling diode. A second layer of silicon oxide (9) is provided on the layer of silicon remote from the perovskite layer.
REFERENCES:
patent: 5723872 (1998-03-01), Seabaugh et al.
patent: 5830270 (1998-11-01), McKee et al.
Anthony John M.
Wilk Glen D.
Brady III Wade James
Chaudhuri Olik
Donaldson Richard L.
Texas Instruments Incorporated
Willie Douglas A.
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