Method for growing group-III nitride semiconductor...

Details Method for growing group-III nitride semiconductor... Method for growing group-III nitride semiconductor...

2006-03-14

2006-03-14

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S603000, C438S604000

Reexamination Certificate

active

07012016

ABSTRACT:
The present invention provides a method for growing group-III nitride semiconductor heteroepitaxial structures on a silicon (111) substrate by using a coincidently matched multiple-layer buffer that can be grown on the Si(111) substrate. The coincidently matched multiple-layer buffer comprises a single-crystal silicon nitride (Si3N4) layer that is formed in a controlled manner by introducing reactive nitrogen plasma or ammonia to the Si(111) substrate at a suitably high temperature. Then, an AlN buffer layer or other group-III nitride buffer layer is grown epitaxially on the single-crystal silicon nitride layer. Thereafter, the GaN epitaxial layer or group-III semiconductor heteroepitaxial structure can be grown on the coincidently matched multiple-layer buffer.

REFERENCES:
patent: 6593016 (2003-07-01), Chiyo et al.
patent: 2003/0049916 (2003-03-01), Surya et al.
patent: 2004/0144990 (2004-07-01), Udagawa

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