Method for growing crystals

Details Method for growing crystals Method for growing crystals

1973-12-11

1976-01-20

Tayman, Jr., James H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

23301SP, 23273SP, 423508, 423511, B01J 1710

Patent

active

039335720

ABSTRACT:
A method of crystal growth is provided that comprises the steps of positioning a foraminous susceptor above and adjacent to a seed crystal and below and in contact with a column of crystal feed material; inductively heating the susceptor so as to melt the top of the seed crystal and a layer of the column adjacent the susceptor; passing crystal feed material melt through openings in the susceptor into contact with the seed crystal, thereby commencing crystal growth; lowering the column toward the heated susceptor, thereby melting the end of the column; and passing the resulting melt through openings in the susceptor to provide material for continued crystal growth.

REFERENCES:
patent: 2855335 (1958-10-01), Seiler et al.
patent: 3008797 (1961-11-01), Bither et al.
patent: 3154384 (1964-10-01), Jones
patent: 3238024 (1966-03-01), Cremer
patent: 3663180 (1972-05-01), Brissot

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