Method for growing compound semiconductor crystal

Details Method for growing compound semiconductor crystal Method for growing compound semiconductor crystal

1987-10-26

1989-08-01

Doll, John

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566163, 1566161, 23295R, C30B 1114, C30B 1100

Patent

active

048530662

ABSTRACT:
A method and an apparatus for growing a crystal of a compound semiconductor, in which a heater, used to heat a boat for growing the semiconductor crystal, is disposed around an ampule containing the boat, and a melt of the compound semiconductor, which is prepared in the boat, is freezed gradually at a predetermined temperature gradient including the freezing point of the melt, from a crystal growth starting end of the boat to a crystal growth terminating end thereof, whereby a single crystal or a polycrystal is grown. At the start of crystal growth, a crystalline nucleus is formed by periodically changing the temperature of the crystal growth starting end of the boat, in descending and ascending modes, within a temperature range lower than the melting point of the compound semiconductor, after once lowering the temperature of the starting end to a level lower than the melting point by means of a heater block opposed to the starting end. The crystal is grown around the crystalline nucleus formed in this manner. Preferably, the temperature change at the crystal growth starting end is slower in the descendng mode than in the ascending mode. The method of the invention may be applied without regard to the use of a seed crystal.

REFERENCES:
patent: 3410665 (1968-11-01), Muller et al.
patent: 4050905 (1977-09-01), Swinehart
patent: 4096025 (1978-06-01), Caslavsky et al.
patent: 4412577 (1983-11-01), Salkeld et al.

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