Method for growing a single crystal of cubic boron nitride semic

Details Method for growing a single crystal of cubic boron nitride semic Method for growing a single crystal of cubic boron nitride semic

1988-03-07

1989-10-24

Straub, Gary P.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156621, 156624, 156DIG86, 156DIG99, 148DIG113, C30B 904, C30B 1902, C30B 2938

Patent

active

048759678

ABSTRACT:
A method for growing a single crystal of cubic boron nitride semiconductor in a growing container sealed under high pressure and high temperature conditions, which comprises dissolving in a dopant-containing boron nitride solvent a boron nitride starting material placed at a high temperature zone in the growing container, and providing a temperature gradient to the solvent so that the temperature dependence of the solubility is utilized to let the single crystal form and grow at a low temperature zone in the growing container.

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patent: 4556448 (1985-12-01), Kim et al.
patent: 4699687 (1987-10-01), Yazu et al.

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