Method for growing a single crystal of compound semiconductor

Details Method for growing a single crystal of compound semiconductor Method for growing a single crystal of compound semiconductor

1987-02-03

1988-11-08

Straub, Gary P.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566171, 156605, 156DIG70, C30B 1522, C30B 2942

Patent

active

047832355

ABSTRACT:
An improvement of LEC methods. Highly impurity doped single crystal often suffers from impurity precipitation. The cause of the occurrence of impurity precipitation is supposed to be the supercooling. To avoid the occurrence of supercooling the pulling speed is slowly lowered during the crystal growth in the LEC methods. The beginning of the occurrence of impurity precipitation is delayed by lowering the pulling speed. Additional application of magnetic field is more effective.

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Buehler et al., "Procede pour la production de cristaux, notamment de germanium, " FR-A-1 029 684, 9/12/55.
Fukudo et al., "Growth and Electrical Properties of Gallium Arsenide Single Crystal", J. Journal of Applied Physics, 1983, pp. 153-156.

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