Method for growing a single crystal

Details Method for growing a single crystal Method for growing a single crystal

1985-05-13

1987-07-07

Lacey, David L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156617SP, 156617V, 156619, 156DIG89, C30B 2702

Patent

active

046785345

ABSTRACT:
A modified liquid encapsulated Czockralski method for growing a single crystal of compound semiconductor is disclosed. This method uses two vessels. An inner vessel is filled with an inactive gas, a gas of an element of group V and optionally an impurity gas. The inner vessel encloses a crucible containing compound semiconductor material, an encapsulant material, and optionally an impurity element. An outer vessel is filled only with the inactive gas. The total pressure of the inner atmosphere is equal to or higher than that of the outer atmosphere. The partial pressure of the gas of the element of group V is larger than the dissociation pressure of the element of group V near the melting point of the compound semiconductor.

REFERENCES:
patent: 3260573 (1966-07-01), Ziegler
patent: 3929557 (1975-12-01), Goodrum
Compound Semiconductors, vol. I, Preparation of III-V Compounds, pp. 256-260, 1962.
J. K. Kennedy, et al, "Study Czochralski Liquid-Seal Crystal Growing Technique", Rome Air Development Center, Apr. 1979.
Journal of Crystal Growth, 24/25, M. Moulin et al, Growth of GaAs Single Crystals by a Rotating Liquid Seal Method, (1974), pp. 376-379.
Journal of Crystal Growth, 19, P. C. Leuing et al, Liquid-Seal Czochralski Growth of Gallium Arsenide, (1973) pp. 356-358.

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