Method for growing a low defect monocrystalline layer on a mask

Details Method for growing a low defect monocrystalline layer on a mask Method for growing a low defect monocrystalline layer on a mask

1982-02-26

1984-11-13

Lacey, David L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

C30B 2504

Patent

active

044824220

ABSTRACT:
An apertured mask layer is disposed on a substrate having a monocrystalline portion at a surface thereof. Essentially all edges of the mask apertures are parallel to a predetermined crystallographic direction. A monocrystalline layer is then deposited such that it grows within the mask apertures and over the mask in a direction perpendicular to the aperture edges.

REFERENCES:
patent: 3239372 (1966-03-01), Sirtl
patent: 3377182 (1968-04-01), Von Bernuth
patent: 3425879 (1969-02-01), Shaw et al.
patent: 3746908 (1973-07-01), Engeler
patent: 3945864 (1976-03-01), Goldsmith
patent: 3985590 (1976-10-01), Mason
The "Epicon" Array: A New Semiconductor Array-Type Camera Tube Structure, W. E. Engeler et al., Applied Physics Letters, vol. 16, No. 5, Mar. 1, 1970, pp. 202-205.
The Epicon Camera Tube: An Epitaxial Diode Array Vidicon, S. M. Blumenfeld et al., IEEE Trans., vol. ED18, No. 11, Nov. 1971, pp. 1036-1042.
Advances in Dichlorosilane Epitaxial Technology, D. J. DeLong, Solid State Technology, Oct. 1972, pp. 29-34, 41.
The Status of Silicon Epitaxy, W. R. Runyan, Semiconductor Silicon, R. R. Haberrecht & E. L. Klein, Eds., New York: Electrochemical Society, May 1969, pp. 169-188.
Selective Epitaxial Deposition of Silicon, B. D. Joyce et al., Nature, vol. 195, pp. 485, 6, Aug. 4, 1962.
"The Growth and Etching of Si Through Windows in SiO.sub.2 ", W. G. Oldham and R. Holmstrom, Solid State Science, vol. 114, No. 4, Apr. 1967.
"Selective Epitaxy of Silicon Under Quasi-Equilibrium Conditions", Erhard Sirtl and Hartmut Seiter, Electrochemical Society, May 1969, pp. 169-188.
"A Technique for Producing Epitaxial Films on Reusable Substrates", R. W. McClelland, C. O. Bozler, J. C. C. Fan, Appl. Phys. Lett., vol. 37, (6), p. 560, Sep. 15, 1980.

Affiliated with

Also associated with

Rating

Method for growing a low defect monocrystalline layer on a mask does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for growing a low defect monocrystalline layer on a mask, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for growing a low defect monocrystalline layer on a mask will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2359730