Method for growing a high-melting-point metal film

Details Method for growing a high-melting-point metal film Method for growing a high-melting-point metal film

1993-01-15

1994-11-01

Thomas, Tom

Fishing, trapping, and vermin destroying

437187, 437190, 437977, H01L 2144

Patent

active

053607660

ABSTRACT:
There is disclosed a process for growing a high-melting-point metal film steps of forming a first ion-implanted layer in a given region of a silicon substrate, in which region a second ion-implanted layer is formed; contacting a high-melting-point metal fluoride gas with the surface of the second ion-implanted layer to adhere the high-melting-point metal thereto; growing the high-melting-point metal film of a given thickness by reacting the mixture of the high-melting-point metal fluoride and silane gas; and subjecting the silicon substrate to a heat treatment, characterized in that the above third and fourth steps are alternatively repeated.

REFERENCES:
patent: 4575920 (1986-03-01), Tsunashima
patent: 4902645 (1990-02-01), Ohba
patent: 5094965 (1992-03-01), Ozaki et al.
patent: 5180468 (1993-01-01), Ko et al.
patent: 5223455 (1993-06-01), Itoh et al.

Affiliated with

Also associated with

Rating

Method for growing a high-melting-point metal film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for growing a high-melting-point metal film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for growing a high-melting-point metal film will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1802327