Method for growing a CdTe layer on a Si substrate by a molecular

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Including change in a growth-influencing parameter

Patent


  [ 0.00 ] – not rated yet Voters 0   Comments 0

Please leave your Comment & Rating

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.