Method for generating substrates of electrophotographic photosen

Details Method for generating substrates of electrophotographic photosen Method for generating substrates of electrophotographic photosen

1982-06-10

1984-07-31

Kittle, John E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

430 69, 430128, C23F 100, B44C 122

Patent

active

044628625

ABSTRACT:
Disclosed is a method for removing an amorphous silicon photosensitive layer from the metallic surface (e.g., aluminum or stainless steel) of a substrate used in electrophotography. The amorphous silicon layer is removed by exposing such layer to a plasma generated in a fluorine containing atmosphere. Such a plasma provides a high etch rate for the amorphous silicon layer and an extremely high silicon-to-metal etch selectivity. Therefore, the amorphous silicon layer may be rapidly removed by etching at a high power density without risk of damaging the polished metallic surface of the electrophotographic substrate. Moreover, since the etching automatically stops when the metallic surface is reached, no end-point detection is necessary.

REFERENCES:
patent: 4341592 (1982-07-01), Shortes
J. Appl. Phys., vol. 20, 1981, #3, 667-668, Toyoda et al., Etching of SiO.sub.2.
Iannuzzi, IEEE Transaction, vol. CHMT-4, #4, Dec. 1981, pp. 429-438.

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