Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1992-09-30
1994-04-26
Chaudhuri, Olik
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
437141, 156613, 356317, 356318, 356346, H01L 2122
Patent
active
053063856
ABSTRACT:
A method and apparatus for producing photoluminescence emissions (68) from thin CaF.sub.2 films grown on either silicon or silicon/aluminum substrate shows narrow emission linewidth and high emission intensities for CaF.sub.2 with thickness as low as 0.2 .mu.m. The preferred embodiment is doped with a rare-earth such as Nd.
REFERENCES:
patent: 4935092 (1990-06-01), Morimoto et al.
Tiwari et al. Appl. Phys. Lett. 57(11), Sep. 1990, "Molecular beam epitaxial growth of (100) oriented CdTe on Si(100) using BaF.sub.2 CaF.sub.2 as a buffer".
L. E. Bausa, C. Fontaine, E. Daran, and A. Munoz-Yague, "Molecular beam epitaxy of Nd-doped CaF.sub.2 and CaSrF.sub.2 layers on Si and GaAs substrates," J. Appl. Phys. 72 (2), Jul. 15, 1992.
Bausa et al. "Optical characterisation of Nd.sup.3+ doped CaF.sub.2 layers grown by MBE" 2nd Intl. Conference on Lasers, Grenoble, France, Jul. 9-11, 1991.
Bausa et al. "Effect of concentration on the emission spectra of CaF.sub.2 : Nd layers grown by MBE" J. Appl. Phys. 70 (1991), pp. 4485-4489.
Bausa et al. "Optimal growth conditions for MBE of Nd.sup.3+ doped CaF.sub.2 " Appl. Phys. Letts. 59 (1991) pp. 3511-3513.
Bausa et al. "Nd.sup.3+ incorporation in CaF.sub.2 layers grown by MBE" Appl. Phys. Letts. 59 (1991) pp. 152-154.
Cho Chih-Chen
Duncan Walter M.
Fan Shou-Kong
Lin Tsen H.
Chaudhuri Olik
Donaldson Richard L.
Kesterson James C.
Paladugu Ramamohan Rao
Skrehot Michael K.
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