Method for generating dense lines on a semiconductor wafer using

Details Method for generating dense lines on a semiconductor wafer using Method for generating dense lines on a semiconductor wafer using

1992-12-18

1995-04-18

Duda, Kathleen

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430328, 430394, 430396, 430397, G03F 722, G03C 500

Patent

active

054077850

ABSTRACT:
Ultra-small equal-width lines and spaces are generated on an integrated circuit wafer using multiple exposures and phase-shifting at the wafer level. In particular, an integrated circuit wafer is coated with a layer of photoresist and then masked using a mask defining a pattern of multiple feature lines arranged at a regular line pitch. The layer of photoresist is then underexposed so as to partially bleach portions of the layer of photoresist in accordance with the pattern. Next, the mask and the integrated circuit wafer are positionally translated relative to one another by a predetermined fraction of the line pitch, and the layer of photoresist is then again underexposed. Developing the photoresist layer creates a stepped profile. The layer of photoresist is then blanket exposed, the stepped profile causing exposure in the vicinity of steps to be retarded. The layer of photoresist is then developed, producing thin lines of photoresist separated by substantially equal spaces of no photoresist.

REFERENCES:
patent: 4021239 (1977-05-01), Ogawa
patent: 4315984 (1982-02-01), Okazaki
patent: 5275896 (1994-01-01), Garofalo
Burggraaf, Pieter, "Four More Significant Japanese Advances in Phase Shifting Technology", Semiconductor International, Dec. 1991.

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