Method for generating contact holes with beveled sidewalls in in

Details Method for generating contact holes with beveled sidewalls in in Method for generating contact holes with beveled sidewalls in in

1987-02-26

1988-08-16

Lacey, David L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156676, 156651, 156652, 156656, 156657, 156664, 252 793, B44C 122

Patent

active

047642459

ABSTRACT:
A method for producing contact holes having sloped walls in intermediate oxide layers through combination of isotropic and anisotropic etching steps which are carried out by means of dry etching in a fluorine-containing plasma. The first etching step is an isotropic etching using an etching gas mixture in which the free fluorine atoms for the isotropic etching step are partially replaced by free CF.sub.3 radicals and ions for the anisotropic etching step. The last etching step is carried out anisotropically. Simultaneously, the electrode spacing in the reactor is reduced during the etching process. Sidewall angles between 60.degree. and 90.degree. can be reproduced with the method of the present invention. The method is particularly useful for the manufacture of large scale integrated semiconductor circuits.

REFERENCES:
patent: 4522681 (1985-06-01), Gorowitz et al.
patent: 4584055 (1986-04-01), Kayanuma et al.
patent: 4595453 (1986-06-01), Yamazaki et al.
patent: 4666555 (1987-05-01), Tsang
patent: 4680085 (1987-07-01), Vijar et al.
Bersin, Richard L., "A Survey of Plasma Etching Processes" Solid State Tech. May 1976.
Chang "Selective Reactive Ion Etching of Silicon Dioxide" Solid State Technology, Apr. 1964, pp. 214 to 219.
Choe et al., "Production RIE-1., Selective Dielectrics Etching" Solid State Technology, Apr. 1984, pp. 177 to 183.
Lam Research, "Refining Etch Technology" Publication date unknown.

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