Method for four direction low capacitance ESD protection

Details Method for four direction low capacitance ESD protection Method for four direction low capacitance ESD protection

2007-02-20

2007-02-20

Hu, Shouxiang (Department: 2811)

Semiconductor device manufacturing: process

Making regenerative-type switching device

Having field effect structure

C438S140000, C438S356000, C438S359000

Reexamination Certificate

active

10207545

ABSTRACT:
The invention describes a structure and a process for providing ESD semiconductor protection with reduced input capacitance. The structure consists of heavily doped P+ guard rings surrounding the I/O ESD protection device and the Vcc to Vss protection device. In addition, there is a heavily doped N+ guard ring surrounding the I/O protection device and its P+ guard ring. The guard rings enhance structure diode elements providing enhanced ESD energy discharge path capability enabling the elimination of a specific conventional Vss to I/O pad ESD protection device. This reduces the capacitance seen by the I/O circuit while still providing adequate ESD protection for the active circuit devices.

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