Method for forming wiring structure which includes annealing...

Details Method for forming wiring structure which includes annealing... Method for forming wiring structure which includes annealing...

2005-09-20

2005-09-20

Nguyen, Thanh (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S633000, C438S637000, C438S638000, C438S687000

Reexamination Certificate

active

06946383

ABSTRACT:
A recess is formed in an insulating film, and then a conductive film is deposited over the insulating film so as to fill the recess. Thereafter, the conductive film is subjected to a first heat treatment. Subsequently, part of the conductive film located outside the recess is removed, and then the remaining part of the conductive film is subjected to a second heat treatment with the surface thereof exposed.

REFERENCES:
patent: 6218302 (2001-04-01), Braeckelmann et al.
patent: 6242349 (2001-06-01), Nogami et al.
patent: 6391777 (2002-05-01), Chen et al.
patent: 2003/0160326 (2003-08-01), Uzoh et al.
patent: 2003/0232498 (2003-12-01), Harada
patent: 2004/0052930 (2004-03-01), Basol et al.
patent: 11-186261 (1999-07-01), None
patent: 2000-277520 (2000-10-01), None

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