Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-04-19
2005-04-19
Everhart, Caridad (Department: 2825)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S633000, C438S693000
Reexamination Certificate
active
06881660
ABSTRACT:
After a plurality of grooves are formed in an insulating film, a barrier metal film and a conductive film are deposited successively on the insulating film such that each of the grooves is filled completely therewith. Subsequently, the portions of the conductive film outside the grooves are removed by polishing and then the portions of the barrier metal film outside the grooves are removed by polishing. Thereafter, a foreign matter adhered to the surface to be polished during polishing is removed and then a surface of the insulating film is polished.
REFERENCES:
patent: 6150268 (2000-11-01), Roy
patent: 6174810 (2001-01-01), Islam et al.
patent: 6184127 (2001-02-01), Doan et al.
patent: 6184128 (2001-02-01), Doan et al.
patent: 6274478 (2001-08-01), Farkas et al.
patent: 6274499 (2001-08-01), Gupta et al.
patent: 6358849 (2002-03-01), Havemann et al.
patent: 6444569 (2002-09-01), Farkas et al.
patent: 6468135 (2002-10-01), Cruz et al.
patent: 6573173 (2003-06-01), Farkas et al.
patent: 20020102834 (2002-08-01), Yang
patent: 07-221058 (1995-08-01), None
patent: 9-326392 (1997-12-01), None
patent: 10-214834 (1998-08-01), None
patent: 2000-340531 (2000-12-01), None
patent: 2001-085375 (2001-03-01), None
patent: 2001-148386 (2001-05-01), None
patent: 2001-156029 (2001-06-01), None
patent: 2001-162520 (2001-06-01), None
patent: 2001-291720 (2001-10-01), None
patent: 2002-508295 (2002-02-01), None
patent: 2002-110879 (2002-04-01), None
patent: 2003-77918 (2003-03-01), None
patent: 2003-77921 (2003-03-01), None
patent: 2003-100746 (2003-04-01), None
patent: WO 9946353 (1999-09-01), None
Hamanaka Masashi
Harada Takeshi
Ueda Tetsuya
Yoshida Hideaki
Everhart Caridad
Lee Calvin
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
LandOfFree
Method for forming wiring structure does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for forming wiring structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming wiring structure will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3434203