Method for forming wiring structure

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Details

C438S633000, C438S693000

Reexamination Certificate

active

06881660

ABSTRACT:
After a plurality of grooves are formed in an insulating film, a barrier metal film and a conductive film are deposited successively on the insulating film such that each of the grooves is filled completely therewith. Subsequently, the portions of the conductive film outside the grooves are removed by polishing and then the portions of the barrier metal film outside the grooves are removed by polishing. Thereafter, a foreign matter adhered to the surface to be polished during polishing is removed and then a surface of the insulating film is polished.

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