Method for forming wiring structure

Details Method for forming wiring structure Method for forming wiring structure

2005-07-19

2005-07-19

Pham, Hoai (Department: 2814)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S627000, C438S629000

Reexamination Certificate

active

06919267

ABSTRACT:
After a plurality of grooves are formed in an insulating film and in an anti-reflection film on the insulating film, a barrier metal film and a conductive film are deposited on the anti-reflection film such that each of the grooves is filled therewith. Subsequently, the portions of the conductive film outside the grooves are removed by polishing and then the portions of the barrier metal film outside the grooves are removed by polishing. Thereafter, respective foreign matters adhered to a polishing pad and to a surface to be polished during polishing are removed and then a surface of the anti-reflection film is polished.

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