Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-11-13
2007-11-13
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S030000, C438S075000, C438S142000, C438S149000, C257SE21017, C257SE21221, C257SE21219, C257SE21223
Reexamination Certificate
active
11250370
ABSTRACT:
A method for forming a wiring pattern according to an aspect of the invention forms a wiring pattern in a certain area on a substrate by using a droplet discharge technique, and includes forming a bank surrounding the certain area on the substrate; discharging a first functional liquid containing a material of the wiring pattern to an area surrounded by the bank to form a first wiring pattern; discharging a second functional liquid onto the first wiring pattern to form a second wiring pattern; and collectively baking the wiring pattern of a plurality of layers including the first wiring pattern and the second wiring pattern.
REFERENCES:
patent: 5132248 (1992-07-01), Drummond et al.
patent: 7070701 (2006-07-01), Takagi et al.
patent: 7101013 (2006-09-01), Nakamura
patent: 7150898 (2006-12-01), Miura
patent: 7172912 (2007-02-01), Toyoda
patent: 2004/0239853 (2004-12-01), Sakurada
Hirai Toshimitsu
Moriya Katsuyuki
Nhu David
Seiko Epson Corporation
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