Method for forming wiring of semiconductor device

Details Method for forming wiring of semiconductor device Method for forming wiring of semiconductor device

2005-03-07

2009-02-03

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000

Reexamination Certificate

active

07485568

ABSTRACT:
According to the present invention, a connection hole is formed above a substrate by an etching treatment using a first resist film as a mask, and after the first resist film is removed by stripping, the substrate is exposed to a water vapor atmosphere. Thus, an amine component in the film is removed before formation of a second resist film for forming a wiring groove, thereby preventing contamination of the second resist film. The present invention is a method for forming wiring of a semiconductor device using a dual damascene method, in which the resist film for forming the wiring groove can be prevented from being contaminated with the amine component or the like.

REFERENCES:
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patent: 2003/0091728 (2003-05-01), Ueda
patent: 2003/0170993 (2003-09-01), Nagahara et al.
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patent: 2007/0026683 (2007-02-01), Chen et al.
patent: 2002-083869 (2002-03-01), None

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