Method for forming wiring of semiconductor device

Details Method for forming wiring of semiconductor device Method for forming wiring of semiconductor device

1997-04-15

1998-09-08

Chaudhuri, Olik

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438659, 438675, 438685, 438945, H01L 214763

Patent

active

058045040

ABSTRACT:
A method for forming an upper metal wiring which is in contact with an under conductive layer in a highly integrated semiconductor device. The method includes the steps of forming a metal wiring layer on a lower insulating film, forming a contact hole in the insulating film to expose an under conductive layer, and growing a metal layer in the contact hole to fill up the contact hole, so that the metal wiring layer can be in contact with the lower conductive layer.

REFERENCES:
patent: 4619037 (1986-10-01), Taguchi et al.
patent: 4670091 (1987-06-01), Thomas et al.
patent: 5102826 (1992-04-01), Oshima et al.
patent: 5529953 (1996-06-01), Shoda

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